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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2333 DESCRIPTION With TO-220C package High speed switching Low collector saturation voltage APPLICATIONS Switching regulator DC-DC converter Ultrasonic appliance PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER INC Collector-base voltage Collector-emitter voltage E SEM ANG H Open base OND IC CONDITIONS TOR UC VALUE 500 400 7 2 4 1 UNIT V V V A A A W ae ae Open emitter Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature Open collector TC=25ae 15 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.5A;IB=0.1A;L=1mA IC=0.5A; IB=0.1A IC=0.5A; IB=0.1A VCE=400V;RBE=51; Ta=125ae VCE=400V;VBE(OFF)=-5.0V VCE=400V;VBE(OFF)=-5.0V Ta=125ae VCB=400V ;IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V MIN 400 2SC2333 SYMBOL VCEO(SUS) VCEsat VBEsat ICER ICEX1 ICEX2 ICBO IEBO hFE-1 hFE-2 ton tstg tf TYP. MAX UNIT V 1.0 1.2 1.0 10 1.0 10 10 |I |I |I V V mA A mA A A Fall time DC current gain Turn on time INC L 30-60 Storage time E SEM ANG H K 40-80 IC=0.5A ; VCE=5V OND IC TOR UC 20 80 10 1.0 2.5 1.0 |I |I |I s s s IC=0.5A;IB1=-IB2=0.1A RL=300;VCC=150V hFE-1 classifications M 20-40 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2333 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2333 CHA IN E SEM NG OND IC TOR UC 4 |
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